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MUN5235 Datasheet, PDF (4/10 Pages) ON Semiconductor – Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k
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MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
ON CHARACTERISTICS
DC Current Gain (Note 5)
hFE
(IC = 5.0 mA, VCE = 10 V)
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 5.0 mA)
Vi(on)
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
VOH
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
R1
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
R1/R2
Min
Typ
Max Unit
nAdc
−
−
100
nAdc
−
−
500
mAdc
−
−
0.2
50
−
Vdc
−
50
−
Vdc
−
80
140
−
Vdc
−
−
0.25
Vdc
−
0.6
−
Vdc
−
0.8
−
Vdc
−
−
0.2
4.9
−
Vdc
−
1.5
2.2
2.9
kW
0.038 0.047 0.056
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