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MUN5235 Datasheet, PDF (3/10 Pages) ON Semiconductor – Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k
MUN5235, DTC123JE, DTC123JM3, NSBC123JF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5235)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
Thermal Characteristics (SC−75) (DTC123JE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
Thermal Characteristics (SOT−723) (DTC123JM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
Thermal Characteristics (SOT−1123) (NSBC123JF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
202
310
1.6
2.5
618
403
280
332
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
−55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
−55 to +150
mW
mW/°C
°C/W
°C
254
29
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
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