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MUN5231DW1 Datasheet, PDF (4/6 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
MUN5231DW1, NSBC123EDXV6
TYPICAL CHARACTERISTICS
MUN5231DW1, NSBC123EDXV6
1
IC/IB = 10
0.1
25C
150C
−55C
1000
VCE = 10 V
100
10
1
25C
150C
−55C
0.01
0
4
3
2
1
0
0
0.1
10
20
30
40
50
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
f = 10 kHz
IE = 0 A
TA = 25C
100
150C
25C
−55C
10
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
100
1
VO = 5 V
0.1
50
0
1
2
3
4
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
−55C
25C
1
150C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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