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| MUN5231DW1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k | |||
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MUN5231DW1, NSBC123EDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5231DW1 (SOTâ363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5231DW1 (SOTâ363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC123EDXV6 (SOTâ563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC123EDXV6 (SOTâ563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FRâ4 @ Minimum Pad.
2. FRâ4 @ 1.0 ï´ 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
â55 to +150
357
2.9
350
500
4.0
250
â55 to +150
Unit
mW
mW/ï°C
ï°C/W
mW
mW/ï°C
ï°C/W
ï°C/W
ï°C
mW
mW/ï°C
ï°C/W
mW
mW/ï°C
ï°C/W
ï°C
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