MMDFS2P102 Datasheet, PDF (4/11 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

MMDFS2P102
TYPICAL FET ELECTRICAL CHARACTERISTICS
4.0
4.0
10 V 4.5 V 3.8 V
T_J = 25°C
V_DS ≥ 10 V
3.0
3.0
2.0
3.1 V
2.0
25°C
1.0
V_GS = 2.4 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1.0
0
1.0
100°C
T_J = − 55°C
1.5
2.0
2.5
3.0
3.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
0.20
T_J = 25°C
T_J = 25°C
0.5
I_D = 1.0 A
0.16
V_GS = 4.5 V
0.4
0.3
0.2
0.1
0
0
2.0
4.0
6.0
8.0
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.12
10 V
0.08
0.04
10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
V_GS = 10 V
1.4
I_D = 2.0 A
100
V_GS = 0 V
T_J = 125°C
1.2
10
1.0
0.8
0.6
−50 −25
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0
0
100°C
5.0
10
15
20
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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