MMDFS2P102 Datasheet, PDF (3/11 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

MMDFS2P102
MOSFET ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol Min
Typ
Max
OFF CHARACTERISTICS
Drain−Source Voltage
(V_GS = 0 Vdc, I_D = 0.25 mA)
Temperature Coefficient (Positive)
Zero Gate Drain Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
(V_DS = 20 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 0.25 mA)
Temperature Coefficient (Negative)
Static Drain−Source Resistance
(V_GS = 10 Vdc, I_D = 2.0 Adc)
(V_GS = 4.5 Vdc, I_D = 2.5 Adc)
Forward Transconductance (V_DS = 3.0 Vdc, I_D = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 16 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DS = 10 Vdc, I_D = 2.0 Adc,
V_GS = 4.5 Vdc,
R_G = 6.0 Ω)
Gate Charge
(V_DS = 16 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc)
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On−Voltage (Note 5)
(I_S = 2.0 Adc,
V_GS = 0 Vdc)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(I_S = 2.0 Adc, V_DD = 15 V,
dIS/dt = 100 A/μs)
V_(BR)DSS
20
−
I_DSS
−
−
I_GSS
−
V_GS(th)
1.0
−
R_DS(on)
−
−
g_FS
2.0
C_iss
−
C_oss
−
C_rss
−
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Q_T
−
Q₁
−
Q₂
−
Q₃
−
V_SD
−
t_rr
−
t_a
−
t_b
−
Q_RR
−
−
25
−
−
−
1.5
4.0
0.118
0.152
3.0
420
290
116
19
66
25
37
15
1.2
5.0
4.0
1.5
38
17
21
0.034
−
−
1.0
10
100
2.0
−
0.160
0.180
−
588
406
232
38
132
50
74
20
−
−
−
2.1
−
−
−
−
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 5)
I_F = 1.0 A
I_F = 2.0 A
V_F
T_J = 25°C
0.47
0.58
T_J = 125°C
0.39
0.53
Maximum Instantaneous Reverse Current (Note 5)
V_R = 20 V
I_R
T_J = 25°C
T_J = 125°C
0.05
10
Maximum Voltage Rate of Change
V_R = 20 V
4. Negative sign for P−channel device omitted for clarity.
5. Pulse Test: Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2.0%.
6. Switching characteristics are independent of operating temperature.
dV/dt
10,000
Unit
Vdc
mV/°C
μAdc
nAdc
Vdc
mV/°C
Ohms
mhos
pF
ns
nC
V
ns
μC
Volts
mA
V/ms
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