MMDF7N02ZR2 Datasheet, PDF (4/12 Pages) ON Semiconductor – Power MOSFET 7 Amps, 20 Volts N−Channel SO−8, Dual

MMDF7N02Z
TYPICAL ELECTRICAL CHARACTERISTICS
15
10 V
12 ^{4.5 V}
2.3 V
9.0
2.1 V
T_J = 25_C
1.9 V
15
V_DS ≥ 10 V
12
9.0
V_GS = 1.7 V
25_C
6.0
6.0
T_J = 100_C
3.0
3.0
− 55_C
0
0
0.5
1.0
1.5
2.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0
0
0.5
1.0
1.5
2.0
2.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.06
0.05
I_D = 7.0 A
T_J = 25_C
T_J = 25_C
0.05
0.04
0.04
0.03
V_GS = 2.7 V
4.5 V
0.03
0.02
0.02
0.01
0.01
0
2.0
4.0
6.0
8.0
10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Drain Current
0
0
2.0
4.0
6.0
8.0
10
12
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
V_GS = 4.5 V
I_D = 3.5 A
1.5
1.0
0.5
10,000
V_GS = 0 V
1000
100
10
1.0
T_J = 125_C
100_C
25_C
0
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (_C)
Figure 5. On−Resistance Variation with
Temperature
0.1
0
4.0
8.0
12
16
20
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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