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MMDF7N02ZR2 Datasheet, PDF (3/12 Pages) ON Semiconductor – Power MOSFET 7 Amps, 20 Volts N−Channel SO−8, Dual | |||
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MMDF7N02Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
â
Coss
â
Crss
â
SWITCHING CHARACTERISTICS (Note 7.)
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 â¦) (Note 6.)
td(on)
â
tr
â
td(off)
â
tf
â
Gate Charge
See Figure 8
(VDS = 12 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc) (Note 6.)
QT
â
Q1
â
Q2
â
Q3
â
SOURCEâDRAIN DIODE CHARACTERISTICS
Forward OnâVoltage
(IS = 7.0 Adc, VGS = 0 Vdc) (Note 6.)
VSD
â
(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)
â
Reverse Recovery Time
trr
â
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 6.)
ta
â
tb
â
Reverse Recovery Stored Charge
QRR
â
6. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2%.
7. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
450
630
pF
350
490
110
155
31
62
ns
230
460
725
1450
780
1560
17
24
nC
1.4
â
6.7
â
6.5
â
0.90
1.1
Vdc
0.84
â
780
â
ns
190
â
590
â
5.7
â
µC
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