MMBTH10LT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – VHF/UHF Transistor

5.0
4.0
3.0
2.0
1.0
0
100
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
MMBTH10LT1G, MMBTH10−4LT1G
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V_CB = 10 Vdc, I_C = 4.0 mAdc, T_A = 25°C)
y_rb, REVERSE TRANSFER ADMITTANCE
0
100
- 1.0
200
MPS H11
-b_rb
-b_rb
MPS H10
-g_rb
200
300 400 500
f, FREQUENCY (MHz)
700 1000
Figure 5. Rectangular Form
- 2.0
400
- 3.0
700
- 4.0
- 5.0
-2.0 -1.8 -1.2 -0.8 -0.4
1000 MHz
0 0.4 0.8 1.2
1.6 2.0
g_rb (mmhos)
Figure 6. Polar Form
y_ob, OUTPUT ADMITTANCE
10
1000 MHz
8.0
700
6.0
b_ob
4.0 400
200
2.0
g_ob
100
0
200
300 400 500 700 1000
0
2.0
4.0
6.0
8.0
10
f, FREQUENCY (MHz)
g_ob (mmhos)
Figure 7. Rectangular Form
Figure 8. Polar Form
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