MMBTH10LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – VHF/UHF Transistor

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MMBTH10LT1G, MMBTH10−4LT1G
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V_CB = 10 Vdc, I_C = 4.0 mAdc, T_A = 25°C)
y_ib, INPUT ADMITTANCE
0
g_ib
- 10
- 20
- b_ib
1000 MHz
- 30
- 40
700
400
200 ₁₀₀
- 50
200 300 400 500 700
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
- 60
1000
0
10 20 30 40 50 60 70 80
g_ib (mmhos)
Figure 2. Polar Form
y_fb, FORWARD TRANSFER ADMITTANCE
b_fb
- g_fb
60
200
400
50
100
40
600
700
30
1000 MHz
20
10
200 300 400 500 700
1000
70 60 50 40 30 20 10 0 - 10 - 20 - 30
f, FREQUENCY (MHz)
g_fb (mmhos)
Figure 3. Rectangular Form
Figure 4. Polar Form
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