MMBT4401WT1G_13 Datasheet, PDF (4/7 Pages) ON Semiconductor – Switching Transistor

MMBT4401WT1G
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
V_CE = 10 Vdc, T_A = 25°C; Bandwidth = 1.0 Hz
10
10
I_C = 1.0 mA, R_S = 150 W
f = 1.0 kHz
8.0
I_C = 500 mA, R_S = 200 W
I_C = 100 mA, R_S = 2.0 kW
R_S = OPTIMUM
RS = SOURCE
8.0
I_C = 50 mA, R_S = 4.0 kW
RS = RESISTANCE
I_C = 50 mA
I_C = 100 mA
6.0
6.0
I_C = 500 mA
I_C = 1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 9. Frequency Effects
50 100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 10. Source Resistance Effects
h PARAMETERS
V_CE = 10 Vdc, f = 1.0 kHz, T_A = 25°C
This group of graphs illustrates the relationship between h_fe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
300
50 k
MMBT4401LT1 UNIT 1
200
MMBT4401LT1 UNIT 2
20 k
10 k
100
70
MMBT4401LT1 UNIT 1
5.0 k
MMBT4401LT1 UNIT 2
50
2.0 k
30
1.0 k
20
0.1
10
7.0
5.0
3.0
2.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 13. Voltage Feedback Ratio
500
0.1
100
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
5.0 7.0 10
20
10
5.0
2.0
1.0
0.1
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 14. Output Admittance
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