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MMBT4401WT1G_13 Datasheet, PDF (1/7 Pages) ON Semiconductor – Switching Transistor | |||
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MMBT4401WT1G
Switching Transistor
NPN Silicon
Features
⢠Moisture Sensitivity Level: 1
⢠ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40
Vdc
60
Vdc
6.0
Vdc
600
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ5 Board
TA = 25°C
Thermal Resistance,
JunctionâtoâAmbient
PD
RqJA
150
mW
833
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SCâ70 (SOTâ323)
CASE 419
STYLE 3
MARKING DIAGRAM
2X MG
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBT4401WT1G SCâ70 3000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 â Rev. 4
Publication Order Number:
MMBT4401WT1/D
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