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MMBT4126LT1G_16 Datasheet, PDF (4/5 Pages) ON Semiconductor – General Purpose Transistor
MMBT4126LT1G
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0
+25°C
0.7
- 55°C
0.5
0.3
0.2
VCE = 1.0 V
0.1
0.1
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
30 mA
20 30
50 70 100
200
TJ = 25°C
100 mA
0.4
0.2
0
0.01
0.02 0.03
1.0
TJ = 25°C
0.8
0.6
0.4
0.2
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0 3.0
5.0 7.0 10
Figure 10. Collector Saturation Region
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
1.0
0.5 qVC FOR VCE(sat)
0
+25°C TO +125°C
- 55°C TO +25°C
VCE(sat) @ IC/IB = 10
- 0.5
- 1.0
- 1.5
qVB FOR VBE(sat)
+25°C TO +125°C
- 55°C TO +25°C
0
1.0 2.0 5.0 10
20
50
100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. “ON” Voltages
- 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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