MMBT4126LT1G_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – General Purpose Transistor

MMBT4126LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mAdc, I_B = 0)
V_(BR)CEO
Vdc
−25
−
Collector−Base Breakdown Voltage
(I_C = −10 mAdc, I_E = 0)
V_(BR)CBO
Vdc
−25
−
Emitter−Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
V_(BR)EBO
−4
Vdc
−
Collector Cutoff Current
(V_CE = −30 Vdc, V_EB = −3.0 Vdc)
I_CEX
nAdc
−
−50
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I_C = −2.0 mAdc, V_CE = −1.0 Vdc)
(I_C = −50 mAdc, V_CE = −1.0 Vdc)
H_FE
−
120
300
60
−
Collector −Emitter Saturation Voltage
(I_C = −50 mAdc, I_B = −5.0 mAdc)
V_CE(sat)
Vdc
−
−0.4
Base −Emitter Saturation Voltage
(I_C = −50 mAdc, I_B = −5.0 mAdc)
V_BE(sat)
Vdc
−
−0.95
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
f_T
MHz
250
−
Output Capacitance
(V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
pF
−
4.5
Input Capacitance
(V_EB = −0.5 Vdc, I_C = 0, f = 1.0 MHz)
C_ibo
pF
−
10
Small −Signal Current Gain
(I_C = −2.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz)
h_fe
−
120
480
2.5
−
Noise Figure
(I_C = −100 mAdc, V_CE = −5.0 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
NF
dB
−
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
T_J = 25°C
T_J = 125°C
10
5000
7.0
3000 ^{VCC = 40 V}
2000 ^{IC/IB = 10}
5.0
C_obo
C_ibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 1. Capacitance
20 30 40
1000
700
500
300
200
100
70
50
1.0
Q_T
Q_A
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 2. Charge Data
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