MJL21193_07 Datasheet, PDF (4/6 Pages) ON Semiconductor – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

MJL21193, MJL21194
3.0
2.5 ^{TJ = 25°C}
I_C/I_B = 10
2.0
1.5
PNP MJL21193
TYPICAL CHARACTERISTICS
1.4
1.2 ^{TJ = 25°C}
I_C/I_B = 10
1.0
0.8
0.6
NPN MJL21194
V_BE(sat)
1.0
V_BE(sat)
0.5
V_CE(sat)
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
0.4
0.2
V_CE(sat)
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
10
T_J = 25°C
PNP MJL21193
1.0
V_CE = 20 V (SOLID)
V_CE = 5 V (DASHED)
10
T_J = 25°C
NPN MJL21194
V_CE = 20 V (SOLID)
1.0
V_CE = 5 V (DASHED)
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
There are two limitations on the power handling ability of
1 SEC
10
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
1.0
The data of Figure 13 is based on T_J(pk) = 150°C; T_C is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
0.1
1.0
10
down.
100
1000
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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