|
MJL21193_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS | |||
|
◁ |
MJL21193, MJL21194
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonârepetitive)
(VCE = 80 Vdc, t = 1 s (nonârepetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
BaseâEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
CollectorâEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
250
â
â
Vdc
ICEO
â
â
100
mAdc
IEBO
â
â
100
mAdc
ICEX
â
â
100
mAdc
IS/b
hFE
VBE(on)
VCE(sat)
THD
fT
Cob
Adc
4.0
â
â
2.25
â
â
25
â
75
8
â
â
â
â
2.2
Vdc
Vdc
â
â
1.4
â
â
4
â
0.8
â
â
0.08
â
4
â
â
%
MHz
â
â
500
pF
6.5
VCE = 10 V
6.0
PNP MJL21193
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product
NPN MJL21194
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain Bandwidth Product
http://onsemi.com
2
|
▷ |