MJH6284 Datasheet, PDF (4/6 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

MJH6284 MJH6287
3000
VCE = 3.0 V
2000
TJ = 150°C
1000
NPN
5000
VCE = 3.0 V
3000 TJ = 150°C
2000
25°C
PNP
25°C
500
300
200
– 55°C
150
0.2 0.3 0.5
1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMPS)
1000
700
– 55°C
500
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.0
2.0 3.0 5.0
2.8
2.6
TJ = 25°C
2.4
2.2
2.0
1.8
IC = 15 A
1.6
1.4
IC = 10 A
1.2
IC = 5.0 A
10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA)
1.0
0.8
1.0
2.0 3.0 5.0
Figure 8. Collector Saturation Region
IC = 15 A
IC = 10 A
IC = 5.0 A
10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA)
3.0
2.5
TJ = 25°C
3.0
2.5
TJ = 25°C
2.0
1.5 ^{VBE @ VCE = 3.0 V}
2.0
VBE(sat) @ IC/IB = 250
1.5 VBE(on) @ VCE = 3.0 V
1.0 ^{VBE(sat) @ IC/IB = 250}
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS)
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS)
Figure 9. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data