MJH6284 Datasheet, PDF (3/6 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

MJH6284 MJH6287
1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2
0.1
0.1 _0.05
0.07 _0.02
0.05
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5 1.0
R_θJC(t) = r(t) R_θJC
R_θJC = 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
2.0 3.0 5.0 10
t, TIME (ms)
20 30 50 100 200 300 500 1000
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50
0.1 ms
20
10
0.5 ms
5.0
1.0 ms
5.0 ms
dc
2.0
1.0
TJ = 150°C
0.5
SECOND BREAKDOWN LIMITED
0.2
BONDING WIRE LIMITED
0.1
0.05
2.0
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
5.0
10
20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. MJH6284, MJH6287
50
40
30
DUTY CYCLE = 10%
20
L = 200 µH
IC/IB ≥ 100
10
TC = 25°C
VBE(off) = 0 – 5.0 V
RBE = 47 Ω
0
0
10 20 30 40 60 80 100 110
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum RBSOA, Reverse Bias
Safe Operating Area
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150 _C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
3