MJH11017_06 Datasheet, PDF (4/6 Pages) ON Semiconductor – 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
30
L = 200 mH
I_C/I_B1 ≥ 50
20 ^{TC = 100°C}
V_BE(off) = 0−5.0 V
R_BE = 47 W
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60 100 140 180 220 260
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
PNP
000
000
000
V_CE = 5.0 V
000
000
T_C = 150°C
000
25°C
500
200
−55 °C
00
0.2 0.3
0.5 0.7 1.0
3.0 5.0
I_C, COLLECTOR CURRENT (AMPS)
NPN
10,000
5000
V_CE = 5.0 V
2000
T_C = 150°C
1000
25°C
500
−55 °C
200
10 15
100
0.2 0.3
0.5 0.7 1.0
3.0 5.0 7.0 10 15
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
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