MJH11017_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

MJH11017, MJH11019,
MJH11021 (PNP)
MJH11018, MJH11020,
MJH11022 (NPN)
Preferred Device
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — h_FE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
V_CEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
V_CE(sat) = 1.2 V (Typ) @ I_C = 5.0 A
= 1.8 V (Typ) @ I_C = 10 A
• Monolithic Construction
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
V_CEO
Vdc
MJH11018, MJH11017
150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJH11020, MJH11019}
200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJH11022, MJH11021
250
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
V_CB
MJH11018, MJH11017
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MJH11020, MJH11019}
MJH11022, MJH11021
Vdc
150
200
250
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak (Note 1)}
V_EB
5.0
Vdc
I_C
15
Adc
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
Derate above 25_C
I_B
0.5
Adc
P_D
150
W
1.2 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction Temperature TJ, Tstg –65 to _C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Range
+150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
R_qJC
0.83 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Stresses exceeding Maximum Ratings may damage the device. Maximum}
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 6
http://onsemi.com
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
MARKING
DIAGRAM
SOT−93
(TO−218)
CASE 340D
STYLE 1
AYWWG
MJH110xx
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device
Package
Shipping
MJH11017
MJH11017G
MJH11018
MJH11018G
MJH11019
MJH11019G
MJH11020
MJH11020G
MJH11021
MJH11021G
MJH11022
MJH11022G
SOT−93
SOT−93
(Pb−Free)
SOT−93
SOT−93
(Pb−Free)
SOT−93
SOT−93
(Pb−Free)
SOT−93
SOT−93
(Pb−Free)
SOT−93
SOT−93
(Pb−Free)
SOT−93
SOT−93
(Pb−Free)
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJH11017/D