MJF6388_08 Datasheet, PDF (4/8 Pages) ON Semiconductor – Complementary Power Darlingtons

MJF6388 (NPN), MJF6668 (PNP)
1
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.05
0.03 _{SINGLE PULSE}
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.3 0.5 1
R_qJC(t) = r(t) R_qJC
R_qJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) R_qJC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K
t, TIME (ms)
Figure 5. Thermal Response
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20 40
60
80 100 120
T_C, CASE TEMPERATURE (°C)
140 160
Figure 6. Maximum Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T_J(pk) = l50_C; T_C is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
NPN
MJF6388
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
12
5
PNP
MJF6668
10,000
5000
T_C = 25°C
V_CE = 4 Vdc
I_C = 3 Adc
2000
1000
500
T_C = 25°C
200
V_CE = 4 VOLTS
I_C = 3 AMPS
100
50
10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
20
10
1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000
f, FREQUENCY (kHz)
Figure 7. Typical Small−Signal Current Gain
http://onsemi.com
4