MJF6388_08 Datasheet, PDF (3/8 Pages) ON Semiconductor – Complementary Power Darlingtons

MJF6388 (NPN), MJF6668 (PNP)
R_B & R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D₁, MUST BE FAST RECOVERY TYPES, e.g.,
 MUR110 USED ABOVE I_B ≈ 100 mA
 MSD6100 USED BELOW I_B ≈ 100 mA
V₁
APPROX.
+12 V
V₂
APPROX.
- 8 V
R_B
51 D1
≈ 8 k
-4 V
25 ms
V_CC
+ 30 V
R_C
TUT
SCOPE
≈ 120
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1%
FOR t_d AND t_r, D₁ IS DISCONNECTED
AND V₂ = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 2. Switching Times Test Circuit
NPN
MJF6388
PNP
MJF6668
7
5
3
t_s
t_f
1
0.7
t_r
0.3
V_CC = 30 V
0.2 I_C/I_B = 250
I_B1 = I_B2
0.1 T_J = 25°C
0.07
0.1 0.2
0.5
1
t_d
2
5
10
I_C, COLLECTOR CURRENT (AMPS)
10
7
5 _tr
3
2
1
0.7
0.5
0.3
0.2
t_f
V_CC = 30 V
I_C/I_B = 250
I_B1 = I_B2
T_J = 25°C
t_s
t_d
0.1
0.1
0.2 0.3 0.5 0.7 1
23
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Typical Switching Times
5 7 10
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
1
T_J = 150°C
dc
5 ms
100 ms
1 ms
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T_C = 25°C
(SINGLE PULSE)
23 5
10
20 30 50
100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Forward Bias
Safe Operating Area
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3