MJF31C_08 Datasheet, PDF (4/5 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJF31C (NPN), MJF32C (PNP)
500
300
T_J = 150°C
100
25°C
70
- 55°C
50
30
V_CE = 2.0 V
2.0
1.6
1.2
I_C = 0.3 A
1.0 A
0.8
T_J = 25°C
3.0 A
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.4
0
3.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
I_B, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
T_J = 25°C
1.2
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0 V
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
+ 2.5
+ 2.0
*APPLIES FOR I_C/I_B ≤ h_FE/2
+ 1.5
T_J = - 65°C TO + 150°C
+ 1.0
+ 0.5
*q_VC FOR V_CE(sat)
0
- 0.5
- 1.0
- 1.5
q_VB FOR V_BE
- 2.0
- 2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
I_C, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
10³
V_CE = 30 V
10²
10¹
T_J = 150°C
10⁰
100°C
10^-1
REVERSE
FORWARD
10^-2
25°C
10^-3
- 0.4 - 0.3 - 0.2 - 0.1
I_CES
0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
10⁷
10⁶
10⁵
I_C ≈ I_CES
I_C = 10 x I_CES
V_CE = 30 V
10⁴
I_C = 2 x I_CES
10³
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 12)
10²
20
40
60
80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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