MJF31C_08 Datasheet, PDF (1/5 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJF31C (NPN),
MJF32C (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
Features
• Collector−Emitter Saturation Voltage −
V_CE(sat) = 1.2 Vdc (Max) @ I_C = 3.0 Adc
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min)
• High Current Gain − Bandwidth Product
f_T = 3.0 MHz (Min) @ I_C = 500 mAdc
• UL Recognized, File #E69369, to 3500 V_RMS Isolation
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
V_CEO
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
V_CB
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
V_EB
5.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector CurrentUnclamped Inductive}
I_C
Adc
Load Energy (Note 1)
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Continuous
5.0
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
I_B
1.0
Adc
P_D
28
W
0.22
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
P_D
2.0
W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Unclamped Inductive Load Energy (Note 1)}
E
32
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg –65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJC
62.5
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
4.46
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I_C = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V_CC = 10 V, R_BE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 5
http://onsemi.com
3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 28 WATTS
4
TO−220 FULLPAK
CASE 221D
STYLE 2
1
23
MARKING DIAGRAM
MJF3xCG
AYWW
x = 1 or 2
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
MJF31C
MJF31CG
MJF32C
MJF32CG
Package
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJF31C/D