MJE5850_15 Datasheet, PDF (4/8 Pages) ON Semiconductor – Switch-mode Series PNP Silicon Power Transistors

MJE5850, MJE5851, MJE5852
Table 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
V_CEO(sus)
RBSOA AND INDUCTIVE SWITCHING
0.0025 mF
+V
50 mF
+-
-10 V
1
20
0
2
PW Varied to Attain
I_C = 100 mA
INPUT
+V
0
50 W
2W
0.2 mF
0.1 mF
500 W
500 W ^{1/2 W}
1/2 W
0.1 mF
MJE15029
1N4934
500 W
1/2 W
0.2 mF
0.0033 mF
1
500 W
1W2
MJE15028W
2
1/2 W
0.1 mF
−V adjusted to obtain desired I_B1
+ V adjusted to obtain desired V_BE(off)
-+
50 mF
-V
L_coil = 80 mH, V_CC = 10 V
R_coil = 0.7 W
L_coil = 180 mH
R_coil = 0.05 W
V_CC = 20 V
V_clamp = 250 V
R_B adjusted to attain desired I_B1
INDUCTIVE TEST CIRCUIT
TUT
1
IN­
PUT
SEE ABOVE FOR
DETAILED CONDITIONS
1N4937
OR
EQUIVALENT
V_clamp
RS =
0.1 W
R_coil
L_coil
V_CC
OUTPUT WAVEFORMS
t₁ Adjusted to
I_C
Obtain I_C
I_CM
t₁
V_CE
V_CEM
TIM­
E
t_f
Cltamped
t_f
t₁ ≈
L_coil (I_CM)
V_CC
L_coil (I_CM)
t₂ ≈ _VClamp
V_clamp
Test Equipment
t _{Scope — Tektronix}
t₂
475 or Equivalent
RESISTIVE SWITCHING
TURN−ON TIME
1
2
I_B1
I_B1 adjusted to
obtain the forced
h_FE desired
TURN−OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
V_CC = 250 V
R_L = 62 W
Pulse Width = 10
ms
RESISTIVE TEST CIRCUIT
TUT
1
R_L
2
V_CC
1.0
t_c 100°C
0.8
I_B
10%
90% I_{B1 VCEM}
t_c
10% 2%
I_CM I_CM
0.6
t_sv 100°C
V_CE
t_fi
t_sr
t_rv
t_ti
0.4
I_C
3.0
I_C = 4 A
2.7
I_C/I_B = 4
T_J = 25°C
2.4
2.1
t_sv 25°C
1.8
1.5
1.2
0.9
90%
I_CM
V_clamp
0.2 _{tc 25°C}
0.6
0.3
I_CM
V_CEM
0
0
TIME
0
1
2
34
5
6
78
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Switching Times
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