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MJE5850_15 Datasheet, PDF (2/8 Pages) ON Semiconductor – Switch-mode Series PNP Silicon Power Transistors
◁
MJE5850, MJE5851, MJE5852
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Symbol
RqJC
TL
Max
1.25
275
Unit
_C/W
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
MJE5850
MJE5851
MJE5852
VCEO(sus)
300
−
350
−
400
−
Vdc
−
−
−
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 W, TC = 100_C)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN
ICEV
−
−
ICER
−
IEBO
−
mAdc
−
0.5
−
2.5
mAdc
−
3.0
mAdc
−
1.0
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with base reverse biased
IS/b
RBSOA
See Figure 12
See Figure 13
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2.0 Adc, VCE = 5 Vdc)
(IC = 5.0 Adc, VCE = 5 Vdc)
hFE
−
15
−
−
5
−
−
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 3.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
−
−
−
Vdc
−
2.0
−
5.0
−
2.5
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
−
−
Vdc
−
1.5
−
1.5
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Cob
pF
−
270
−
Resistive Load (Table 1)
Delay Time
Rise Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
td
tp = 50 ms, Duty Cycle ≤ 2%)
tr
Storage Time
Fall Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
ts
VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle ≤ 2%)
tf
Inductive Load, Clamped (Table 1)
−
0.025
0.1
ms
−
0.100
0.5
ms
−
0.60
2.0
ms
−
0.11
0.5
ms
Storage Time
Crossover Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 100_C)
tsv
−
0.8
3.0
ms
tc
−
0.4
1.5
ms
Fall Time
tfi
−
0.1
−
ms
Storage Time
Crossover Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tsv
−
0.5
−
ms
tc
−
0.125
−
ms
Fall Time
tfi
−
0.1
−
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: PW = 300 ms. Duty Cycle ≤ 2%
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