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| MJE5740_15 Datasheet, PDF (4/6 Pages) ON Semiconductor – NPN Silicon Power Darlington Transistors | |||
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MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
PW
DUTY CYCLE ⤠10% 68
tr, tf ⤠10 ns
+â5 V
1N493 33
3
0.001 mF
33 1N493
3
2N222
1
2
k
1
+â5 Vk
MJE21
0
RB
IB
VCC
L
IC
1N493
NOTE:
3
0.02 mF 270
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1
k 2N2905
47 100
1/2
W
T.U.T.
MJE20
0
- VBE(off)
MR826
*
Vclamp
*SELECTED FOR ⥠1 kV
5.1
k VCE
51
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200 mH/20 A
Lcoil = 200 mH
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
OUTPUT WAVEFORMS
IC
IC(pk)
tf
CLAMPED
t
t1
tf
VCE
VCEâOR
Vclamp
t
TIMÂ
t2
E
t1 ADJUSTED TO
OBTAIN IC
t1 â
Lcoil (ICpk)
VCC
t2 â
Lcoil (ICpk)
Vclamp
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
+VCC
RC
TUT
RB
SCOPE
D
1
-â4 V
VCC = 250 V
D1 = 1N5820 OR EQUIV.
+10 V
25 ms
0
- 9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
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