MJE5740_15 Datasheet, PDF (3/6 Pages) ON Semiconductor – NPN Silicon Power Darlington Transistors

MJE5740, MJE5742
TYPICAL CHARACTERISTICS
100
80
SECOND BREAKDOWN DERATING
60
THERMAL DERATING
40
20
0
0 20 40 60 80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
I_C(pk)
V_CE(pk)
90% V_CE(pk) 90% I_C
I_C
t_sv
t_rv
t_fi
t_ti
V_CE
I_B
90% I_B1
t_c
10% V_CE(pk)
10%
I_C(pk) ^{2% I}C
TIME
Figure 2. Inductive Switching Measurements
2000
2.4
1000
V_CE = 5 V
100
150°C
+ 25°C
- 55°C
2.2
h_FE = 20
2
1.8
- 55°C
1.6
1.4
+ 25°C
1.2
1
+150°C
0.8
0.6
10
0.1
0.4
1
2
5
10
0.2
0.5
1
2
5
10
I_C, COLLECTOR CURRENT (AMPS)
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
1.8
1.6
h_FE = 20
1.4
1.2
1
- 55°C
0.8
+ 25°C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
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