MJE200_07 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors

MJE200 - NPN, MJE210 - PNP
10
7.0
1.0Ăms
500Ăms
100Ăms
5.0
3.0
dc
5.0Ăms
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
T_J = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T_C = 25°C
ą(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V_CEO
2.0 3.0
5.0 7.0 10
20 30
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C - V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. T_J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
3K
t_s
V_CC = 30 V
I_C/I_B = 10
2K
I_B1 = I_B2
1K
T_J = 25°C
500
300
200
100
t_f
50
30 ^MJE200
20 ^MJE210
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Turn-Off Time
200
T_J = 25°C
C_ib
100
70
50
C_ob
30
MJE200 (NPN)
MJE210 (PNP)
20
0.4 0.6 1.0
2.0
4.0 6.0 10
20
40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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