MJE200_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors

MJE200 - NPN,
V_CC
+ā30 V
+11 V
0
25 ms
-ā9.0 V
R_B
51
R_C
SCOPE
D₁
t_r, t_f ≤ 10 ns
-ā4 V
DUTY CYCLE = 1.0%
R_B and R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
ąD₁ MUST BE FAST RECOVERY TYPE, e.g.:
ąą1N5825 USED ABOVE I_B ≈ 100 mA
ąąMSD6100 USED BELOW I_B ≈ 100 mA
Figure 2. Switching Time Test Circuit
MJE210 - PNP
1K
500
t_d
300
200
100
50
30
t_r
20
10
5
3
MJE200
2
MJE210
V_CC = 30 V
I_C/I_B = 10
T_J = 25°C
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Turn-On Time
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.02
0.05
0.01
0.03 0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
q_JC(t) = r(t) q_JC
q_JC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
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