MCR25_05 Datasheet, PDF (4/5 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR25D, MCR25M, MCR25N
130
120
a
110
a = Conduction
Angle
100
90
dc
80
0
a = 30°
60° 90°
180°
2 4 6 8 10 12 14 16 18 20
I_T(RMS), RMS ON−STATE CURRENT (AMPS)
Figure 7. Typical RMS Current Derating
32
28
24
a
20 ^{a = Conduction}
Angle
16
a = 30°
12
180°
dc
60° ^90°
8
4
0
0 2 4 6 8 10 12 14 16 18 20
I_T(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 8. On State Power Dissipation
1200
2500
Gate Cathode Open,
Gate−Cathode Open,
(dv/dt does not depend on RGK)
1000
(dv/dt does not depend on RGK)
2000
800
1500
85°C
V_PK = 275
600
100°C
110°C
1000
400
T_J = 125°C
V_PK = 600
V_PK = 400
500
200
V_PK = 800
0
200
300
400
500
600
700
800
V_PK , Peak Voltage (Volts)
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage
0
80 85 90 95 100 105 110 115 120 125
T_J, Junction Temperature (°C )
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature
300
1 CYCLE
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 11. Maximum Non−Repetitive Surge Current
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4