MCR25_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability − 300 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of I_GT, V_GT, and I_H Specified for
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum @ 125°C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = −40 to 125°C, Sine Wave,
V_RRM
50 to 60 Hz, Gate Open)
MCR25D
400
MCR25M
600
MCR25N
800
On-State RMS Current
(180° Conduction Angles; T_C = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
I_T(RMS)
I_TSM
I²t
25
A
300
A
373
A²sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, T_C = 80°C)
Forward Average Gate Power
(t = 8.3 ms, T_C = 80°C)
P_GM
20.0
W
P_G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T_C = 80°C)
I_GM
2.0
A
Operating Junction Temperature Range
T_J
−40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 5
http://onsemi.com
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR25xG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR25D
TO−220AB
50 Units / Rail
MCR25DG
MCR25M
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MCR25MG
MCR25N
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MCR25NG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR25/D