MC74VHCT00A_14 Datasheet, PDF (4/8 Pages) ON Semiconductor – Quad 2-Input NAND Gate

MC74VHCT00A
The q_JA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time
Junction Temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V_CC
T_A = 25°C
T_A ≤ 85°C
T_A ≤ 125°C
(V) Min Typ Max Min Max Min Max Unit
V_IH
Minimum High−Level
Input Voltage
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
V_IL
Maximum Low−Level
Input Voltage
3.0
0.53
0.53
0.53 V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
V_OH
Minimum High−Level V_IN = V_IH or V_IL
Output Voltage
I_OH = −50 μA
V_IN = V_IH or V_IL
V_IN = V_IH or V_IL
I_OH = −4 mA
I_OH = −8 mA
V_OL
Maximum Low−Level V_IN = V_IH or V_IL
Output Voltage
I_OL = 50 μA
V_IN = V_IH or V_IL
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
I_IN
Maximum Input
V_IN = 5.5 V or GND
Leakage Current
3.0 2.9 3.0
2.9
2.9
V
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
3.0
0.0 0.1
0.1
0.1 V
4.5
0.0 0.1
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
0 to
±0.1
±1.0
±1.0 μA
5.5
I_CC
Maximum Quiescent V_IN = V_CC or GND
5.5
Supply Current
2.0
20
40 μA
I_CCT
Quiescent Supply
Input: V_IN = 3.4 V
5.5
Current
1.35
1.50
1.65 mA
I_OPD
Output Leakage
V_OUT = 5.5 V
0.0
Current
0.5
5.0
10 μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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