MC74VHCT00A_14 Datasheet, PDF (3/8 Pages) ON Semiconductor – Quad 2-Input NAND Gate

MC74VHCT00A
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
This device contains
V_CC
DC Supply Voltage
−0.5 to +7.0
V
protection circuitry to guard
against damage due to high
V_IN
DC Input Voltage
−0.5 to +7.0
V
static voltages or electric
V_OUT
DC Output Voltage
V_CC = 0
−0.5 to 7.0
V
High or Low State −0.5 to V_CC + 0.5
fields. However, pre-
cautions must be taken to
avoid applications of any
I_IK
Input Diode Current
I_OK
Output Diode Current
−20
V_OUT < GND; V_OUT > V_CC
+20
mA voltage higher than maxi-
mum rated voltages to this
mA _{high−impedance circuit. For}
I_OUT
DC Output Current, per Pin
+25
mA ^{proper operation, V}in ^and
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^ICC
DC Supply Current, V_CC and GND
+50
P_D
Power Dissipation in Still Air,
SOIC Package (Note 1)
500
TSSOP Package (Note 1)
450
mA
V_out should be constrained
to the range GND v (V_in or
mW ^Vout^{) v V}CC^.
Unused inputs must al-
ways be tied to an appropri-
T_L
Lead temperature, 1 mm from case for 10 s
260
°C _{ate logic voltage level (e.g.,}
T_stg
Storage temperature
−65 to +150
°C
either GND or V_CC). Un-
used outputs must be left
V_ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
> 2000
> 200
V
open.
Charged Device Model (Note 4)
> 3000
I_{Latch−Up} Latch−Up Performance
Above V_CC and Below GND at 125°C
±300
mA
(Note 5)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are
exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Derating − SOIC Package: –7 mW/_C from 65_ to 125_C
− TSSOP Package: −6.1 mW/_C from 65_ to 125_C
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
V_CC
DC Supply Voltage
3.0
5.5
V
V_IN
DC Input Voltage
0.0
5.5
V
V_OUT
DC Output Voltage
VCC = 0
High or Low State
0.0
5.5
V
0.0
V_CC
T_A
Operating Temperature Range
−55
+125
°C
t_r , t_f
Input Rise and Fall Time
V_CC = 3.3 V ± 0.3 V
0
V_CC = 5.0 V ± 0.5 V
0
100
ns/V
20
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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