MC74LVX541 Datasheet, PDF (4/8 Pages) ON Semiconductor – Octal Bus Buffer

MC74LVX541
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_in Maximum Input Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_OZ Maximum Three–State Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC Maximum Quiescent Supply Current}
Test Conditions
V_in = 5.5 V or GND
V_in = V_IL or V_IH
V_out = V_CC or GND
V_in = V_CC or GND
V_CC
V
0 to 3.6
3.6
3.6
T_A = 25°C
Min Typ Max
±0.1
±0.2
5
4.0
T_A = – 40 to 85°C
Min
Max Unit
±1.0 mA
±2.5 mA
40.0 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)}
T_A = 25°C
T_A = – 40 to 85°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Maximum Propagation Delay, A to Y
V_CC = 2.7 V
C_L = 15 pF
C_L = 50 pF
5.0 7.0 1.0
7.5 10.5 1.0
8.5
ns
12.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC= 3.3±0.3V CL=15pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^CL ^{= 50 pF}
3.5 5.0 1.0
6.0
5.0 7.0 1.0
8.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
t_PZH
Output Enable TIme,
OE to Y
V_CC = 2.7 V
R_L = 1 kW
C_L = 15 pF
C_L = 50 pF
6.8 10.5 1.0
9.3 14.0 1.0
12.5 ns
16.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=3.3±0.3V CL=15pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RL = 1 kW}
C_L = 50 pF
4.7 7.2 1.0
8.5
6.2 9.2 1.0
10.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHZ
Output Disable Time,
OE to Y
V_CC = 2.7 V
R_L = 1 kW
C_L = 50 pF
11.2 15.4 1.0
17.5 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC=3.3±0.3V CL=50pF
R_L = 1 kW
6.0 8.8 1.0
10.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tOSLH, Output to Output Skew}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tOSHL
V_CC = 2.7 V
(Note 1)
C_L = 50 pF
1.5
1.5
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC= 3.3±0.3V CL=50pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Note 1)
1.0
1.0
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C_in Maximum Input Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C_out Maximum Three–State Output Capacitance
(Output in High Impedance State)
4.0 10
6.0
10
pF
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Typical @ 25°C, VCC = 5.0V}
C_PD Power Dissipation Capacitance (Note 2)
18
pF
1. Parameter guaranteed by design. t_OSLH = |t_PLHm – t_PLHn|, t_OSHL = |t_PHLm – t_PHLn|.
2. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC/8 (per bit). C_PD is used to determine the no–load
dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
NOISE CHARACTERISTICS (Input t_r = t_f = 3.0 ns, C_L = 50 pF, V_CC = 3.3 V)
Symbol
Parameter
V_OLP Quiet Output Maximum Dynamic V_OL
V_OLV Quiet Output Minimum Dynamic V_OL
V_IHD Minimum High Level Dynamic Input Voltage
V_ILD Maximum Low Level Dynamic Input Voltage
T_A = 25°C
Typ
Max Unit
0.5
0.8
V
–0.5
–0.8
V
2.0
V
0.8
V
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