MC74HCT366A Datasheet, PDF (4/7 Pages) ON Semiconductor – Hex 3-State Inverting Buffer with Common Enables and LSTTL Compatible Inputs

MC74HCT366A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
I_OZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
6.0
± 0.5
± 5.0
± 10
μA
V_in = V_IL or V_IH
V_out = V_CC or GND
I_CC
Maximum Quiescent Supply
Current (per Package)
V_in = V_CC or GND
I_out = 0 μA
6.0
4
40
160
μA
AC ELECTRICAL CHARACTERISTICS (C_L = 50 pF, Input t_r = t_f = 6 ns)
Symbol
t_PLH,
t_PHL
Parameter
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
t_PLZ,
t_PHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
t_PZL,
t_PZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
t_TLH,
t_THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
C_in
Maximum Input Capacitance
C_out
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Guaranteed Limit
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
2.0
120
150
180
ns
3.0
60
75
90
4.5
24
30
36
6.0
20
26
31
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
60
75
90
ns
3.0
22
28
34
4.5
12
15
18
6.0
10
13
15
—
10
10
10
pF
—
15
15
15
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD
Power Dissipation Capacitance (Per Buffer)*
60
pF
* Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC.
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