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MC74HCT366A Datasheet, PDF (3/7 Pages) ON Semiconductor – Hex 3-State Inverting Buffer with Common Enables and LSTTL Compatible Inputs
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MC74HCT366A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5 V
Vout DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5 V
Iin
DC Input Current, per Pin
± 20
mA
Iout DC Output Current, per Pin
± 25
mA
ICC DC Supply Current, VCC and GND Pins
± 50
mA
PD Power Dissipation in Still Air,
SOIC Package†
500
mW
TSSOP Package†
450
Tstg Storage Temperature
– 65 to + 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC DC Supply Voltage (Referenced to GND)
2.0 6.0 V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55 + 125 _C
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V 0
VCC = 3.0 V 0
VCC = 4.5 V 0
VCC = 6.0 V 0
1000 ns
600
500
400
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
VCC
Test Conditions
V
VIH
Minimum High−Level Input
Vout = VCC – 0.1 V
4.5
Voltage
|Iout| v 20 μA
to
5.5
VIL
Maximum Low−Level Input
Vout = 0.1 V
4.5
Voltage
|Iout| v 20 μA
to
5.5
VOH
Minimum High−Level Output
Vin = VIH
2.0
Voltage
|Iout| v 20 μA
4.5
6.0
VOL
Maximum Low−Level Output
Voltage
Vin = VIH
|Iout| v 3.6 mA 3.0
|Iout| v 6.0 mA 4.5
|Iout| v 7.8 mA 6.0
Vin = VIL
2.0
|Iout| v 20 μA
4.5
6.0
Vin = VIL
|Iout| v 3.6 mA 3.0
|Iout| v 6.0 mA 4.5
|Iout| v 7.8 mA 6.0
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
Guaranteed Limit
– 55 to
25_C v 85_C v 125_C Unit
2.0
2.0
2.0
V
0.80
0.80
0.80
V
1.9
1.9
1.9
V
4.4
4.4
4.4
5.9
5.9
5.9
2.48
2.34
2.20
3.98
3.84
3.70
5.48
5.34
5.20
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
0.1
0.1
0.26
0.33
0.40
0.26
0.33
0.40
0.26
0.33
0.40
± 0.1
± 1.0
± 1.0
μA
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