|
MC74HC273A_05 Datasheet, PDF (4/10 Pages) ON Semiconductor – Octal D Flip−Flop with Common Clock and Reset High−Performance Silicon−Gate CMOS | |||
|
◁ |
MC74HC273A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Guaranteed Limit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
VCC â 55 to
V
25_C v 85_C v 125_C Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IOZ Maximum ThreeâState Leakage
Output in HighâImpedance State
6.0
± 0.5
Current
Vin = VIL or VIH
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout = VCC or GND
± 5.0
± 10
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC MaximumQuiescent Supply
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
160
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ fmax Maximum Clock Frequency (50% Duty Cycle)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figures 1 and 4)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLH MaximumPropagationDelay,ClocktoQ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL
(Figures 1 and 4)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL MaximumPropagationDelay,ResettoQ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figures 2 and 4)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tTLH MaximumOutputTransitionTime,AnyOutput
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tTHL
(Figures 1 and 4)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Cin MaximumInputCapacitance
Guaranteed Limit
VCC â 55 to
V
25_C v 85_C v 125_C Unit
2.0
6.0
5.0
4.0
MHz
3.0
15
10
8.0
4.5
30
24
20
6.0
35
28
24
2.0
145
180
220
ns
3.0
90
120
140
4.5
29
36
44
6.0
25
31
38
2.0
145
180
220
ns
3.0
90
120
140
4.5
29
36
44
6.0
25
31
38
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighâSpeed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Enabled Output)*
48
pF
* Used to determine the noâload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
http://onsemi.com
4
|
▷ |