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MC74HC273A_05 Datasheet, PDF (4/10 Pages) ON Semiconductor – Octal D Flip−Flop with Common Clock and Reset High−Performance Silicon−Gate CMOS
MC74HC273A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
VCC – 55 to
V
25_C v 85_C v 125_C Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOZ Maximum Three−State Leakage
Output in High−Impedance State
6.0
± 0.5
Current
Vin = VIL or VIH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout = VCC or GND
± 5.0
± 10
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC MaximumQuiescent Supply
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4.0
40
160
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ fmax Maximum Clock Frequency (50% Duty Cycle)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Figures 1 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH MaximumPropagationDelay,ClocktoQ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
(Figures 1 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL MaximumPropagationDelay,ResettoQ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Figures 2 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTLH MaximumOutputTransitionTime,AnyOutput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTHL
(Figures 1 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin MaximumInputCapacitance
Guaranteed Limit
VCC – 55 to
V
25_C v 85_C v 125_C Unit
2.0
6.0
5.0
4.0
MHz
3.0
15
10
8.0
4.5
30
24
20
6.0
35
28
24
2.0
145
180
220
ns
3.0
90
120
140
4.5
29
36
44
6.0
25
31
38
2.0
145
180
220
ns
3.0
90
120
140
4.5
29
36
44
6.0
25
31
38
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Enabled Output)*
48
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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