MC74HC164A_06 Datasheet, PDF (4/11 Pages) ON Semiconductor – 8−Bit Serial−Input/Parallel−Output Shift Register

MC74HC164A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
V_CC −55_C to
V
25_C v 85_C v 125_C _Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL Maximum Low−Level Output}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Voltage
V_in = V_IH or V_IL
|I_out| v 20 mA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIH or VIL |Iout| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{|Iout|v5.2mA 6.0}
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input Leakage Current V_in = V_CC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC MaximumQuiescent Supply
Current (per Package)
V_in = V_CC or GND
I_out = 0 mA
6.0
4
40
160
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{NOTE:Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book}
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C_L = 50 pF, Input t_r = t_f = 6 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{fmax Maximum Clock Frequency (50% Duty Cycle)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Figures 1 and 4)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tPHL MaximumPropagationDelay,ResettoQ}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Figures 2 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tTLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_THL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cin MaximumInputCapacitance}
Guaranteed Limit
V_CC −55_C to
V
25_C v 85_C v 125_C _Unit
2.0
10
10
10
MHz
3.0
20
20
20
4.5
40
35
30
6.0
50
45
40
2.0
160
200
250
ns
3.0
100
150
200
4.5
32
40
48
6.0
27
34
42
2.0
175
220
260
ns
3.0
100
150
200
4.5
35
44
53
6.0
30
37
45
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
—
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Per Package)*
180
pF
* Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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