MBT3906DW1T1 Datasheet, PDF (4/6 Pages) ON Semiconductor – Dual General Purpose Transistor

MBT3906DW1T1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V_CE = − 5.0 Vdc, T_A = 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200 W
I_C = 1.0 mA
4.0
SOURCE RESISTANCE = 200 W
I_C = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
I_C = 50 mA
12
f = 1.0 kHz
10
8
6
I_C = 1.0 mA
I_C = 0.5 mA
2.0
4
1.0 ^{SOURCE RESISTANCE = 2.0 k}
I_C = 100 mA
2
I_C = 50 mA
I_C = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz)
Figure 7.
0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
R_g, SOURCE RESISTANCE (k OHMS)
Figure 8.
300
200
100
70
50
30
0.1
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h PARAMETERS
(V_CE = − 10 Vdc, f = 1.0 kHz, T_A = 25°C)
100
70
50
30
20
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
5.0 7.0 10
10
7
5
0.1
10
7.0
5.0
3.0
2.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mA)
Figure 10. Output Admittance
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
5.0 7.0 10
1.0
0.7
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
http://onsemi.com
4