MBT3906DW1T1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual General Purpose Transistor

MBT3906DW1T1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I_C = −0.1 mAdc, V_CE = −1.0 Vdc)
(I_C = −1.0 mAdc, V_CE = −1.0 Vdc)
(I_C = −10 mAdc, V_CE = −1.0 Vdc)
(I_C = −50 mAdc, V_CE = −1.0 Vdc)
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_BL
I_CEX
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
C_ibo
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Continued)
Characteristic
Input Impedance
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V_CE = −5.0 Vdc, I_C = −100 mAdc, R_S = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V_CC = −3.0 Vdc, V_BE = 0.5 Vdc)
(I_C = −10 mAdc, I_B1 = −1.0 mAdc)
(V_CC = −3.0 Vdc, I_C = −10 mAdc)
(I_B1 = I_B2 = −1.0 mAdc)
Symbol
h_ie
h_re
h_fe
h_oe
NF
t_d
t_r
t_s
t_f
Min
Max
Unit
−40
−
−40
−
−5.0
−
−
−50
−
−50
Vdc
Vdc
Vdc
nAdc
nAdc
−
60
−
80
−
100
300
60
−
30
−
Vdc
−
−0.25
−
−0.4
Vdc
−0.65 −0.85
−
−0.95
250
−
MHz
−
4.5
pF
−
10.0
pF
Min
Max
Unit
2.0
12
kW
0.1
10
X 10^{− 4}
100
400
−
3.0
60
mmhos
−
4.0
dB
−
35
ns
−
35
−
225
ns
−
75
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