MBT3904DW1T1G Datasheet, PDF (4/8 Pages) ON Semiconductor – Dual General Purpose Transistors

MBT3904DW1T1G, MBT3904DW2T1G
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
C_ibo
3.0
2.0
C_obo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
T_J = 25°C
T_J = 125°C
5000
3000 ^{VCC = 40 V}
2000 ^{IC/IB = 10}
1000
700
500
300
200
100
70
50
1.0
Q_T
Q_A
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
500
500
300
I_C/I_B = 10
300
V_CC = 40 V
200
200
I_C/I_B = 10
100
70
50
30
20
10
7
5
1.0
t_r @ V_CC = 3.0 V
40 V
15 V
t_d @ V_OB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
100
70
50
30
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
500
300
200 ^{IC/IB = 20}
I_C/I_B = 10
t′_s = t_s - ¹/₈ t_f
I_B1 = I_B2
100
70
50
I_C/I_B = 20
30
I_C/I_B = 10
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
500
300
200
100
70
50
30
20
10
7
5
1.0
I_C/I_B = 20
V_CC = 40 V
I_B1 = I_B2
I_C/I_B = 10
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
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