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MBT3904DW1T1G Datasheet, PDF (2/8 Pages) ON Semiconductor – Dual General Purpose Transistors
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MBT3904DW1T1G, MBT3904DW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBL
−
ICEX
−
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
−
−
0.65
−
fT
300
Cobo
−
Cibo
−
hie
1.0
2.0
hre
0.5
0.1
hfe
100
100
hoe
1.0
3.0
NF
−
−
Max
Unit
Vdc
−
Vdc
−
Vdc
−
nAdc
50
nAdc
50
−
−
−
300
−
−
Vdc
0.2
0.3
Vdc
0.85
0.95
MHz
−
pF
4.0
pF
8.0
kW
10
12
X 10− 4
8.0
10
−
400
400
mmhos
40
60
dB
5.0
4.0
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