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MBT2222ADW1T1G Datasheet, PDF (4/6 Pages) ON Semiconductor – General Purpose Transistor | |||
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MBT2222ADW1T1G
200
IC/IB = 10
100
TJ = 25°C
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
30
td @ VEB(off) = 0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. TurnâOn Time
500
300
200
tâ²s = ts - 1/8 tf
100
70
50
tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. TurnâOff Time
10
10
RS = OPTIMUM
f = 1.0 kHz
8.0
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
RS = SOURCE
RS = RESISTANCE
8.0
IC = 50 mA
100 mA, RS = 2.0 kW
100 mA
6.0
50 mA, RS = 4.0 kW
6.0
500 mA
1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. CurrentâGain Bandwidth Product
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