MBT2222ADW1T1G Datasheet, PDF (2/6 Pages) ON Semiconductor – General Purpose Transistor

MBT2222ADW1T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage,
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(I_C = 10 mAdc, I_B = 0)
V_(BR)CEO
40
−
Vdc
(I_C = 10 mAdc, I_E = 0)
V_(BR)CBO
75
−
Vdc
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
6.0
−
Vdc
(V_CE = 60 Vdc, V_EB(off) = 3.0 Vdc)
I_CEX
−
10
nAdc
(V_CB = 60 Vdc, I_E = 0)
(V_CB = 60 Vdc, I_E = 0, T_A = 125°C)
I_CBO
mAdc
−
0.01
−
10
(V_EB = 3.0 Vdc, I_C = 0)
I_EBO
−
100
nAdc
(V_CE = 60 Vdc, V_EB(off) = 3.0 Vdc)
I_BL
−
20
nAdc
DC Current Gain
(I_C = 0.1 mAdc, V_CE = 10 Vdc)
(I_C = 1.0 mAdc, V_CE = 10 Vdc)
(I_C = 10 mAdc, V_CE = 10 Vdc)
(I_C = 10 mAdc, V_CE = 10 Vdc, T_A = −55°C)
(I_C = 150 mAdc, V_CE = 10 Vdc) (Note 2)
(I_C = 150 mAdc, V_CE = 1.0 Vdc) (Note 2)
(I_C = 500 mAdc, V_CE = 10 Vdc) (Note 2)
Collector−Emitter Saturation Voltage (Note 2)
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
Base−Emitter Saturation Voltage (Note 2)
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
h_FE
V_CE(sat)
V_BE(sat)
−
35
−
50
−
75
−
35
−
100
300
50
−
40
−
Vdc
−
0.3
−
1.0
Vdc
0.6
1.2
−
2.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(I_C = 20 mAdc, V_CE = 20 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(I_E = 20 mAdc, V_CB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(I_C = 100 mAdc, V_CE = 10 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
rb, C_c
NF
300
−
MHz
−
8.0
pF
−
25
pF
kW
2.0
8.0
0.25
1.25
X 10^{− 4}
−
8.0
−
4.0
−
50
300
75
375
mmhos
5.0
35
25
200
−
150
ps
−
4.0
dB
Delay Time
Rise Time
(V_CC = 30 Vdc, V_BE(off) = − 0.5 Vdc,
I_C = 150 mAdc, I_B1 = 15 mAdc)
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
I_B1 = I_B2 = 15 mAdc)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
t_d
−
10
ns
t_r
−
25
t_s
−
225
ns
t_f
−
60
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