MBRM1H100T3G Datasheet, PDF (4/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM1H100T3G
TYPICAL CHARACTERISTICS
140
T_J = 25°C
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
V_R, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
50% (DUTY CYCLE)
100 25%
10%
5.0%
10 _2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm² pad)
100
50% (DUTY CYCLE)
25%
10 10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in² pad)
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100
1000
100
1000