MBRM1H100T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM1H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
V_R
100
V
Average Rectified Forward Current
(T_L = 168°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_O
I_FSM
1.0
A
50
A
Storage and Operating Junction Temperature Range (Note 1)
T_stg, T_J
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I_F = 1.0 A, T_J = 25°C)
(I_F = 2.0 A, T_J = 25°C)
(I_F = 1.0 A, T_J = 125°C)
(I_F = 2.0 A, T_J = 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
2. Mounted with 700 mm² copper pad size (Approximately 1 in²) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm² copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
Symbol
Y_JCL
R_qJA
R_qJA
Symbol
V_F
I_R
Value
12
75
260
Value
0.76
0.84
0.61
0.68
20
1.0
Unit
°C/W
°C/W
°C/W
Unit
V
mA
mA
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