MBRM120E Datasheet, PDF (4/8 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM120E
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc
FREQ = 20 kHz
SQUARE WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145 165
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
0.7
dc
SQUARE
0.6
WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1000
100
150
TJ = 25°C
148
146
Rtja = 33.72°C/W
51°C/W
69°C/W
83.53°C/W
96°C/W
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
144
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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