MBRM120E Datasheet, PDF (2/8 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM120E
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 130°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135°C)
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
Rtjl
Rtjtab
Rtja
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
Value
20
1.0
2.0
50
–65 to 150
–65 to 150
10,000
35
23
277
Unit
V
A
A
A
°C
°C
V/ms
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
VF
TJ = 25°C TJ = 100°C
V
0.455
0.530
0.595
0.360
0.455
0.540
IR
TJ = 25°C TJ = 100°C
mA
10
1600
1.0
500
0.5
300
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