J308 Datasheet, PDF (4/8 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

J308 J309 J310
30
3.0
24 ^{VDS = 10 V}
ID = 10 mA
TA = 25°C
18
2.4
Y11
1.8
12
Y21
1.2
6.0
Y22
0.6
Y12
0
100
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 6. Common–Gate Y Parameter
Magnitude versus Frequency
θ_21, θ₁₁
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
130° 0°
100
θ_12, θ₂₂
– 20° 87°
θ₂₂
– 20°
– 40° 86°
θ₂₁
– 60°
– 80° 85°
– 100°
θ₁₂
– 120° 84°
θ₁₁
VDS = 10 V
ID = 10 mA
TA = 25°C
– 140°
– 160° 83°
– 180°
200 300
– 200° 82°
500 700 1000
f, FREQUENCY (MHz)
Figure 8. Common–Gate Y Parameter
Phase–Angle versus Frequency
|S21|, |S11|
0.85 0.45
|S12|, |S22|
0.060 1.00
0.79 0.39
0.73 0.33
0.67 0.27
VDS = 10 V
ID = 10 mA
TA = 25°C
S22
S21
0.048 0.98
0.036 0.96
0.024 0.94
0.61 0.21
S11
0.012 0.92
0.55 0.15
100
S12
0.90
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 7. Common–Gate S Parameter
Magnitude versus Frequency
θ_11, θ₁₂
– 20° 120°
θ₁₁
– 40° 100° ^θ21
θ₂₂
θ_21, θ₂₂
0
– 20°
– 60° 80°
– 40°
– 80° 60°
θ₁₂
– 100° 40°
– 120° 20°
100
θ₂₁ – 60°
VDS = 10 V
ID = 10 mA
θ₁₁
TA = 25°C
200 300 500 700
f, FREQUENCY (MHz)
– 80°
– 100°
1000
Figure 9. S Parameter Phase–Angle
versus Frequency
8.0
24
7.0 ^{VDD = 20 V}
21
f = 450 MHz
6.0 ^{BW ≈ 10 MHz}
18
CIRCUIT IN FIGURE 1
5.0
15
Gpg
4.0
12
NF
3.0
9.0
2.0
6.0
1.0
3.0
0
0
4.0 6.0 8.0 10 12 14 16 18 20 22 24
ID, DRAIN CURRENT (mA)
Figure 10. Noise Figure and
Power Gain versus Drain Current
7.0
6.0
5.0
4.0 VDS = 10 V
ID = 10 mA
3.0 TA = 25°C
CIRCUIT IN FIGURE 1
2.0
Gpg
NF
1.0
0
50
100 200 300
f, FREQUENCY (MHz)
26
22
18
14
10
6.0
2.0
500 700 1000
Figure 11. Noise Figure and Power Gain
versus Frequency
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data